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Gate-first high-/metal-gate n-MOSFETs with a deep subnanometer (sub-nm) equivalent oxide thickness (EOT) of 0.58 nm were successfully fabricated with Schottky source/drain contacts using a low-temperature process. The key to achieving such a thin EOT is the use of a low-temperature process for the NiSi Schottky source/drain formation. A sulfur implantation technique was used to overcome the Schottky...
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