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In this paper, simulation-based research on the electrostatics of Pi-gate silicon-on-insulator (SOI) MOSFETs is carried out. To do so, a 2-D self-consistent Schrodinger-Poisson solver has been implemented. The inclusion of the quantum effects has been demonstrated to be necessary for the accurate simulation of these devices in the nanometer range. Specifically, this paper is focused on the corner...
Multiple gate SOI MOSFETs can give rise to the formation of independent channels with different threshold voltages. This phenomenon is the so called corner effects. In this work, we have carried out a thorough study of the corner effects on a Pi-Gate SOI MOSFET. To get our goal, we have developed a numerical simulator that solves the 2D Schr?dinger-Poisson equations self-consistently in the structure...
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