The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A new multi-valued static random access memory (MVSRAM) cell with a hybrid circuit consisting of single-electron (SE) and MOSFETs is proposed. The previously reported MVSRAM with SE-MOSFET hybrid circuit needs two data lines, one bit line (BL) for write operations and one sense line (SL) for read operations, to improve the speed of the read-out operation, but the proposed cell has only one data line...