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This paper gives a proper characterization of n-channel UTBOX nMOSFETs in linear operation in term of static performances and low frequency noise behavior. At first, the main electrical parameters are extracted, in particular, the threshold voltage, the mobility and the access resistances. Then, the approach of low frequency noise study is presented as a non-destructive diagnostic tool to identify...
Low frequency noise is investigated in n-type UTBOX transistors presenting different channel orientations (standard μ100ξ and rotated μ110ξ). It was observed that decreasing temperature reduces the 1/f noise level particularly for a short rotated device. However, unexpected variation of the flicker noise in strong inversion was observed for the long rotated channel. Furthermore, evolution of generation-recombination...
This paper gives a proper characterization of n-channel UTBOX nMOSFETs in linear operation in term of static performances and low frequency noise behavior. At first, the main electrical parameters are extracted, in particular, the threshold voltage, the mobility and the access resistances. Then, the approach of low frequency noise study is presented as a non-destructive diagnostic tool to identify...
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