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Flexibly controllable threshold voltage (V th ) asymmetric gate oxide thickness (T ox ) independent double-gate (DG) FinFETs (4T-FinFETs) have been demonstrated. Thin drive-gate oxide (HfO 2 or SiON or SiO 2 ) and slightly thick V th -control-gate oxide (thick SiO 2 +drive-gate oxide) have been successfully incorporated into the 4T-FinFETs by utilizing...
One of the biggest challenges for the VLSI circuits with 32-nm-technology nodes and beyond is to overcome the issue of catastrophic increases in power consumption due to short-channel effects (SCEs). Fortunately, "independent" double-gate (DG) FinFETs (named "4-terminal-FinFET" because of its four terminals; source, drain, gate 1 and gate 2) have a promising potential to overcome...
Flexibly-Vth-controllable four-terminal-FinFETs (4T-FinFETs) (Fried, et al., 2003) have great potential to prevent catastrophic increases in static power consumption. Previously-reported 4T-FinFETs had symmetrically thin gate oxides on both channels, unfortunately resulting in large S-slope due to the negative effect of the high second gate (G2) controllability (Lim, et al., 1983). To attain a good...
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