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In this work, the influence of the temperature and the different equivalent oxide thickness (EOT) of In0.53Ga0.47As nTFETs fabricated with gas phase Zn diffusion is analyzed. The different devices have in their gates stacks 3 nm of HfO2 (with an EOT of 1 nm) or 2 nm of HfO2 (with an EOT of 0.8 nm). The use of an EOT of 0.8 nm increases the band-to-band tunneling generation and also improves the subthreshold...
This work reports for the first time on the experimental study of the intrinsic voltage gain of InGaAs nTFET. The influence of Indium/Gallium composition and Zn diffusion temperature is analyzed. For a higher Indium amount (In0.7Ga0.3As compared to In0.53Ga0.47As) the band to band tunneling (BTBT) is improved due to bandgap narrowing. A higher Zn diffusion temperature gives rise to a higher source...
Low frequency noise diagnostics is a powerful tool to study the quality of gate stacks and the different interfaces and also gives detailed information on the device performance and reliability. The influence of new materials, different processing treatments and alternative device concepts on the low frequency noise performance will be reviewed for a variety of advanced device technologies including...
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