The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A comparison of RF reliability at 10 GHz on four different undoped AlGaN/GaN HEMT structures with AlGaN barrier thickness variation is presented. The output power degradation characteristics during RF stress for each structure are shown, and the results indicate a strong dependence of reliability on AlGaN thickness. A device from the structure with the thinnest AlGaN in the study, with initial output...