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A new NbN multilayer technology has been developed on 3 inch diameter R-plane sapphire substrates, for combining on-chip fast RSFQ circuits with GHz bandwidth optical links, The circuits take advantage of two high quality [110] NbN layers sputtered epitaxially on sapphire at 600/spl deg/C and selectively patterned: a 400 nm thick layer (/spl lambda//sub L//spl sim/250 nm at 6 K) acts for the ground-plane...