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Two unique gate oxide failure mechanisms are associated with deep trench processes for a 0.18 µm power semiconductor device. One failure mode is a “mini-LOCOS” defect, that is due to inadvertent oxidation of Si in the active area during deep trench oxidation. The other failure mode is due to slip associated with dislocations from the deep trenches. These defects are eliminated by optimizing the SiN...
Two unique gate oxide failure mechanisms are associated with deep trench processes for a 0.18 μm power semiconductor device. One failure mode is a “mini-LOCOS” defect, that is due to inadvertent oxidation of Si in the active area during deep trench oxidation. The other failure mode is due to slip associated with dislocations from the deep trenches. These defects are eliminated by optimizing the SiN...
Tetragonal polycrystalline Mn-Ga nanoflakes with a nominal composition of Mn1.33Ga were prepared by the surfactant-assisted high-energy ball milling method, and the effects of milling time and annealing treatment on structure and the magnetic properties were also investigated in detail. The irregular Mn1.33Ga flakes show typical shape anisotropy and a high aspect ratio with thicknesses in the range...
The Kaczmarz method, or the algebraic reconstruction technique (ART), is a popular method for solving large-scale overdetermined systems of equations. Recently, Strohmer et al. proposed the randomized Kaczmarz algorithm, an improvement that guarantees exponential convergence to the solution. This has spurred much interest in the algorithm and its extensions. We provide in this paper an exact formula...
Metal ions embedded in dielectric films may play an important role in the reliability of advanced interconnect systems. In this talk, we will discuss the generation and drift of different metal ions such as Cu, Ta, and Ti into the dielectric materials from gate electrodes under an external electric field at elevated temperatures. Some strategies to eliminate the generation of metal ions will also...
SiO x films were deposited on Si(100) substrates by evaporation of SiO powder. The samples were annealed from room-temperature (RT) to 1100°C. After the samples were cooled down to RT, photoluminescence (PL) spectra from these samples were measured. It was found that when the annealing temperature Ta is not higher than 1000°C, there is a PL centered at 620nm, and with Ta increasing the intensity...
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