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The recently available precursor biphosphinoethane (BPE) was used, alongside with phosphine and with tertbutylphosphine (TBP), to grow advanced multiquantum-well (MQW) laser wafers with five quaternary, compressive strained wells. The lowest threshold current densities and the lowest optical losses were obtained with BPE. In particular, the lowest threshold current density, 328 A/cm/sup 2/, is a record...
Excellent 1.3 micrometer buried heterostructure laser devices were realised for the first time with active light-emitting layers grown from the alternative phosphorous precursor TBP instead of phosphine. A wider temperature range than previously reported was explored for growth under TBP. The replacement of phosphine appears entirely feasible, albeit expensive.<<ETX>>
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