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Ultrahigh-speed 1.5 mu m narrow-contact planar BH-DFB lasers which have a lightly-doped InP buried layer are developed. A cutoff frequency as high as 16.5 GHz is achieved at 80 mA. This excellent high-speed performance is attained by reducing the chip parasitic capacitance and by detuning the oscillating wavelength to be lower than the gain peak. Main contributions to the capacitance reduction are...