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Ion-implanted MESFETs have been fabricated on an inverted GaAs/AlGaAs heterostructure. The aluminium concentration in the AlGaAs is graded from 0% at the substrate to 30% at the heterointerface. A maximum extrinsic transconductance of 410 mS/mm is achieved with 0.5 mu m gate devices. This heterojunction ion-implanted FET (HIFET) also exhibits enhanced microwave performance, especially at low drain...
Inverted GaAs/AlGaAs heterostructures grown by MOCVD have been used to fabricate conventional ion-implanted MESFETs. Two types of GaAs/AlGaAs heterojunctions are studied. One type has a compositionally graded AlGaAs layer which provides a built-in field and corresponding quantum well at the heterointerface. The other type has a constant-composition AlGaAs layer. 0.5 mu m gate devices fabricated using...
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