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A high-linearity CMOS power amplifier (PA) operating at 2.4 GHz with an integrated diode lineariser is presented. A diode-connected N-type MOS transistor is used to increase the Vgs of the power transistor as input power increases for linearity improvement. The CMOS PA fabricated in 180 nm CMOS technology achieved 32 dB small signal gain, 30.2 dBm Psat, 28.2 dBm P1 dB, and a 31.1% peak power added...
A wideband voltage-controlled oscillator (VCO) covering 2.24–4.95 GHz for multi-standard wireless applications is presented. Realised in TSMC 180 nm RFCMOS process, the VCO provides a phase noise <–124.2 dBc/Hz at a 1 MHz offset in the whole frequency range, while drawing 10 and 18 mA at 4.95and 2.24 GHz from a 1.8 V supply, respectively. The achieved tuning range is 75% and the core chip area...
A 1.9GHz linear CMOS power amplifier (PA) using a newly proposed power combiner for higher output power is presented. The PA adopts MOS-level linearizers including the multiple gated transistors (MGTR) and PMOS compensation to reduce the non-linearity induced by the gm3 and Cgs, which are the dominant harmonic distortion sources. The schematic simulation results demonstrate a gain of 28.9dB, a maximum...
Stability is the major obstacle for capacitor-less low- dropout regulator (LDO). By using Miller compensation, a low frequency dominant pole is internally generated, and two other non-dominant poles, which frequency are higher than unity gain frequency (UGF), can be configured by Damping-Factor-Control (DFC) block. With opposed zero cancellation, single pole system is formed before UGF and satisfied...
A new output buffer with low switching noise and load adaptability is designed based on a TSMC 90 nm CMOS technology. The proposed buffer can reduce switching noise induced on supply lines and output ringing while achieving very fast output transitions. Moreover, the load adaptive method is simple and effective. Simulation results demonstrate that the proposed buffer achieves 4.1%-53.5% improvements...
A novel Schmitt trigger circuit, implemented by a RS trigger and two simple distinct inverters, is proposed. Its trigger levels are determined by two CMOS inverters. Contrasted with traditional six transistors Schmitt trigger, its temperature and supply voltage characteristics have been analyzed. Apply these two triggers into relaxation oscillator and the result shows that the proposed one in this...
A 1.25 Gbps integrated laser diode driver (LDD) driving an edge-emitting laser is presented for optical-fiber communication applications. The IC can provide both modulation current (5 mA to 85 mA) with temperature compensation adjustments to minimize the variation in extinction ratio, and independent bias current (4 mA to 100 mA) with automatic power control. This paper firstly proposes a novel circuit...
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