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One critical factor that determines the feasibility of employing carbon nanotubes as channel materials for post-silicon logic devices is the process compatibility to the current CMOS process flow. We show a wafer-scale integration scheme of carbon nanotube field-effect transistor (CNFET) that is performed by 8" production tools. High density CNT arrays were transferred on the processed wafer,...
This study investigates 38 CNFETs and shows that nearly 3 orders of magnitude current variation can be explained in a comprehensive way by the diameter variation among nanotubes alone. This is the first systematic analysis that correlates the device performance with the nanotube properties quantitatively. It also shows that one can neglect the impact of the preparation on the contact quality to a...
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