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In this research, a new structure and process integration for backside illuminated CMOS image sensor by using thin wafer handling technology is proposed. First of all, the wafer of a 3 Mega pixel CMOS image sensor is temporary bonded to a silicon carrier wafer with thermal plastic material and ZoneBond technology. Then the CMOS wafer is thinned down to few microns to detect the light from the backside...
In this study, a wafer-level 3D integration scheme with Cu TSVs based on Cu/Sn micro-bump and BCB adhesive hybrid bonding is demonstrated. To realize the signal transmission effects in high speed digital signaling via Cu TSV and Cu/Sn micro-joint interconnection, the insertion loss was investigated by simulation analysis with variable TSV pitches, micro-bump diameters and chip thicknesses. Key technologies...
Developments of ultra fine pitch and high density solder microbumps for advanced 3D stacking technologies are discussed in this paper. CuSn solder microbumps with 25 ??m in pitch are fabricated at wafer level by electroplating method and the total thicknesses of the platted Cu and Sn are 10 ??m. After plating, the micro bumps on the Si chip are reflowed at 265??C and the variation of bump height measured...
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