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We have successfully fabricated InGaAs-OI tri-gate nMOSFETs, for the first time. The devices were depletion-type (p-n junction-less) nFETs with Fin-channel width (Wfin) down to 20 nm and had metal source/drain structures. It was experimentally demonstrated that Wfin scaling effectively improved cut-off properties at Nd up to 5 × 1018 cm−3 and the electron mobility in the narrowest channel (Wfin =...
We propose a scalable CMOS fabrication process for high mobility InGaAs/Ge dual channels using a common TaN metal source/drain and gate (Metal-SD&G) under consideration of material band lineup. By combining common TaN Metal-SD with compatible TaN/Al2O3 gate stacks, we have successfully demonstrated operation of both InGaAs nMOS and Ge pMOS devices fabricated at the same time. Excellent InGaAs/Ge...
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