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We fabricated a novel resonant-tunneling-diode terahertz oscillator with high-frequency modulation structure for high-capacity terahertz communication and measured the frequency response using vector network analyzer. A very high cut-off frequency of 30 GHz in intensity modulation was obtained by the device oscillating at 350 GHz with reduced MIM capacitor of 0.7 pF.
We report an increase in oscillation frequency of room-temperature terahertz oscillators using AIAs/InGaAs resonant tunneling diodes (RTDs) with optimized collector spacer thickness. Because of the trade-off relation between the capacitance and electron transit time for the spacer thickness, an optimum thickness exists in terms of the oscillation frequency. The highest frequency in this experiment...
Although the direct-modulation frequency in a resonant-tunneling-diode oscillator increases by reducing the metal-insulator-metal capacitance, the output power degrades simultaneously. We figured out this mechanism using an equivalent circuit model. Based on this result, a novel structure was proposed and fabricated, and terahertz oscillation without degradation in output power was obtained.
We proposed a resonant tunneling diode (RTD) with InAlGaAs/InP composite collector for reduction in transit delay caused by the gamma to L valley transition at the collector depletion region. Terahertz oscillators fabricated with this RTD show room-temperature fundamental oscillations of 680–770 GHz with the RTD areas of 1–1.5 square microns. Higher frequency will be possible by reducing the RTD area.
Room-temperature fundamental oscillation of up to 1.31 THz was achieved in thin-well resonant tunneling diodes integrated with planar slot antennas. The output powers were ∼10 µW at 1.31 THz and around 30 nW in the 0.8–1.1 THz region. This high frequency oscillation with relatively high output power is attributed to a reduction in the intrinsic delay and an increase in the widths of current density...
A fundamental oscillation up to 915 GHz was observed at room temperature in InGaAs/AlAs resonant tunneling diode integrated with planar slot antennas. By reducing the mesa area, parasitic capacitance of resonant tunneling diode was decreased. The output power was small (around a few tens nW) at present because of a small area (ap0.63 mum2) and a low available current density (ap3 mA/mum2) which is...
We observed coherent power combination in 3-element oscillator array using resonant tunneling diodes coupled through planar circuits. In the array, a single peak at 293 GHz with the output power of 13 muW was observed.
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