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REBULF (reduced bulk field) and ENDIF (enhanced dielectric layer field) technologies are used in the design of lateral power devices to improve breakdown voltage. The two technologies have been shown to offer good performance in a variety of application domains, both in bulk silicon and SOI substrates. This paper aims to offer a compendious and timely review of the two technologies and some works...
Reduced Bulk Field (REBULF) technology is used in the design of lateral power devices to improve breakdown voltage. Since this technology was firstly presented in 2006, this technology has gained widespread attention amongst researchers and has shown to offer good performance in a variety of application domains, especially in bulk silicon and SOI. This paper aims to offer a compendious and timely...
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