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In this work we investigate the major scattering mechanisms leading to degradation of mobility in HfO2-gated, modulation doped, strained In0.53Ga0.47As/In0.77Ga0.23As QW structures were grown by molecular beam epitaxy on semi-insulating InP substrates. By varying In0.53Ga0.47As/InAlAs barrier and HfO2 thickness along with controlling interface state density and using temperature dependent Hall mobility...
We demonstrate the tunablity of coherent interaction between exciton-lattice-polaritons and photonic crystal bandedge states in a GaAs/Al0.22Ga0.78As double-quantum-well based photonic crystal in the presence of a variable external electric field.
Through a detailed evaluation of various dielectrics, we address the primary challenges associated with gate stacks on high electron mobility InGaAs channels. More specifically we address key gate stack issues including a) EOT scalability for high performance and electrostatic control (this work CET ~0.78 nm) with acceptable leakage both at operating and offstate for low power (this work Jg ~1 A/cm...
Charge trapping and wearout characteristics of self-aligned enhancement-mode GaAs nMOSFETs with silicon interface passivation layer and HfO2 gate oxide are systematically investigated at various time scales (from micro-seconds to seconds). Unlike high-kappa on silicon devices, both bulk trapping and interface trapping affect the PBTI (positive bias temperature instability) characteristics of nMOSFETs...
We demonstrate for the first time self-aligned, gate-first, enhancement mode n-MOSFETs with InGaAs and GaAs/InGaAs channels, Atomic Layer Deposition HfO2 gate oxide and TaN gate. Good control of the drain current was achieved due to effective passivation of the III-V-high-k interface with ultra-thin MBE in-situ grown a-Si layer. High transconductance and electron channel mobility along with negligible...
Tunnel-coupled pairs of InGaAs quantum well (QW) grown on top of InAs quantum dots (QDs) were optimized. All-epitaxial QDs-QW VCSELs demonstrated CW-mode lasing (Ith= 1.8 mA, Pmax.= 0.7mW) at QD ground state emission wavelength, 1135nm.
To reduce density of interface states and avoid Fermi level pinning at the III–V-high-k interface we employed an amorphous Si interface passivation layer (a-Si IPL) in situ deposited on top of GaAs or InGaAs MOSFET channels grown by molecular beam epitaxy. The high-k gate stack was further fabricated ex situ on top of the IPL with HfO 2 dielectric and TaN metal gate. Combination of transmission...
In this work, using Si interface passivation layer (IPL) we present the electrical characteristics of TaN/HfO2/GaAs both p-and n-MOSFET made on GaAs substrates with excellent electrical and reliability characteristics, thin EOT (~2.3-3.0nm), low frequency dispersion (< 5%) and high maximum mobility (1213 cm2/V-s) with high temperature PMA for n-MOSFET on undoped GaAs. Good inversion behavior with...
We report on active Q-switching of AlGaAs/GaAs VCSELs with In0.16Ga0.84As MQW active region and absorber. Pulse widths of 40 ps at repetition rates of 4 GHz were measured at 5 dBm incident RF power.
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