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Stacked HfOx based vertical RRAM with interface engineering for 3D cross-point architecture is fabricated using a cost-effective fabrication process. The excellent performances such as low reset current, fast switching speed, high switching endurance and disturbance immunity, good retention and self-selectivity are demonstrated in the fabricated HfOx based vertical RRAM devices. The scaling limit...
We report that the endurance degradation behaviors of transitional metal oxide (TMO) based resistive random access memory (RRAM) is dominated by three different steps and correlated with extra oxygen vacancy accumulation during SET/RESET switching process. The physical origin of endurance degradation due to the pulse voltage effect is verified by the measured data. The optimized operation schemes...
This paper presents a unified physical model to elucidate the resistive switching behavior of metal-oxide-based resistive random access memory (RRAM) devices using the ion-transport-recombination model. In this model, the rupture of conductive filaments is caused by recombination of oxygen ions and electron-low-occupied oxygen vacancies. The transport equations of interstitial oxygen ions in the oxide...
In this paper, the characteristics and mechanism of the transition metal oxide (TMO) based resistive switching memory (RRAM) devices were addressed. The results show that doping in oxide matrix materials, electrode material, and operating mode of the set/reset process may significantly affect the resistive switching behaviors of RRAM devices. Optimizing the dopants and matrix materials, electrode...
Excellent bipolar resistive switching (RS) behavior was achieved in TiN/ZnO/Pt resistive random access memory (RRAM) devices. A unified physical model based on electrons hopping transport among oxygen vacancies along the conductive filaments (CFs) is proposed to elucidate the RS behavior in the RRAM devices. In the unified physical model, a new reset mechanism due to the depletion of electrons in...
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