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High speed TSV signals can penetrate through the dielectric liner material, transfer in the silicon substrate and degrade the performance of FEOL devices. In this paper we investigate TSV noise coupling to active device including both FinFET and planar transistors. Calibrated TCAD models are used to perform time domain analysis and understand the mechanisms of substrate noise interaction with active...
We study the effect of process-induced uniaxial stress on the performance of biaxially strained InGaSb p-channel quantum-well field-effect transistors (QW-FETs). Uniaxial stress is incorporated using a self-aligned nitride stressor. Compared with unstressed control devices, fabricated stressed devices with a gate length of L\(_{g}=0.30\) \(\mu \) m showed an increase of more than 40% in the drain...
The 3D IC stacking technology with Through Silicon via (TSV) approach promises lower cost, smaller footprint and higher performance for heterogeneous system integration. 3D integration technology needs key components to be enabled: Like TSV technology, Wafer thinning, thin wafer carrier and handling technology and μbumps interconnects. In the via-middle 3D-Stacked IC approach, Cu filled TSVs are integrated...
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