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The thermal and electrical stabilities of Cu contact on NiSi substrate with and without a Ru/TaN barrier stack were investigated. Four point probe (FPP), X-ray diffraction (XRD), scanning electron microscopy (SEM), and Schottky barrier height (SBH) measurement were carried out to characterize the diffusion barrier properties. The results show that the Ru(14 nm)/TaN(15 nm) stack can be both thermally...
High quality Ru thin film with low electrical resistivity (10~14 ????cm) was successfully deposited on the Si, atomic layer deposition (ALD) grown TiN(2nm)/Si and ALD TaN(5 nm)/Si substrates by using plasma enhanced atomic layer deposition (PEALD). Different growth mode and crystallization behavior were observed for the Ru films grown on these different substrates. Results show that the lowest surface...
In this paper, a bi-layered Ti/TiN capping is proposed and demonstrated to be very effective to suppress oxygen contamination, and to allow the formation of Yb-silicide using conventional PVD and RTA systems. It is revealed that the diffusion of Ti into TiN layer plays the key role for oxidation suppression. The admittance measurement is proposed to extract Schottky contact barrier height. In this...
Electrochemical capacitance-voltage (ECV) technique has been employed in profiling dopant concentration of ultra-shallow p+n junctions formed by plasma doping. The results show that the junction depth determined by ECV is in good agreement with that determined by secondary ion mass spectroscopy. The results also show that ECV is capable of characterizing pn junctions with junction depth down to 10...
The reaction between Ni and amorphous SiGeC thin film on SiO2 substrate is investigated. Four point probe (FPP), X-ray diffraction (XRD) and Auger electron spectroscopy (AES) depth profiling are used to check the sheet resistance, the phase formation and atomic distribution during the reaction. It is found that comparing with Ni reaction with a-SiGe, the phase change of Ni reaction with a-SiGeC is...
The properties of the ruthenium (Ru)/ TaN as copper diffusion barrier in copper low dielectric constant material(low-k) metallization were studied by sheet resistance, X-ray diffraction (XRD), X-ray photoelectron spectroscopy(XPS), transmission electron microscopy (TEM) and electrical current leakage-voltage tests. Cu, Ru and TaN thin films were deposited by ion beam sputtering technique. Sheet resistance...
The polycrystalline ruthenium films were grown on TaN substrates by atomic layer deposition at temperatures ranging from 300 degC to 330 degC using bis(cyclopentadienyl) ruthenium [RuCp2] and oxygen as precursors. Pretreatment of reactive ion etching (RIE) was performed to the underlying substrates before deposition in order to improve the nucleation. Various tests were carried out to characterize...
Carbides of refractory metals have been used as diffusion barriers due to their high melting point and good thermal and mechanical stability. In this work binary WC films have been investigated as Cu diffusion barriers by using ex-situ sheet resistance (Rs), X-ray diffraction (XRD) measurement and in-situ laser light scattering measurements. It was found that the WC film has stronger oxidation resistance...
The properties of pulse plated copper electrodeposits (1 mum) on ruthenium (5nm)/TaSiN (5nm) diffusion barrier with current density ranging from 2 to 20 A/dm2 are studied. The resistivity of the Cu film is about 2.7muOmegamiddotcm. A (111) preferential orientation is found in almost all cases, which would be good to electromigration performance. Grain size of Cu electrodeposits reduces with increasing...
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