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In this work, the properties of sputtered Mo/TaN bilayers and Mo-Ta single layer as diffusion barriers were investigated for Cu metallization. The experimental results show that the Mo(5nm)/TaN(5nm) stack can withstand annealing up to 600°C for 30min and the Mo-Ta(5nm) alloy barrier can effectively prevent Cu diffusion after 500°C annealing.
In this work, the effects of electrodes on the performance of sol-gel fabricated ZnO thin film transistor were investigated. The metal with high work function such as Pt was employed as the source-drain electrodes. Compared to the device with Al electrodes as reported before, the transistor fabricated with Pt electrode exhibited lower saturation voltage and current, which was due to the Schottky contact...
The effect of the ZnO homo-buffer layer on the structural, optical and electrical properties of the Sol-gel ZnO films was systematically investigated. The XRD and SEM results show that the homo-buffer layer can improve the degree of the preferential c-axis orientation (the best Lotering orientation factor (F) can reach 0.915), the grain size and the surface morphology of thereon ZnO films. A narrower...
The reaction between Ni and amorphous SiGeC thin film on SiO2 substrate is investigated. Four point probe (FPP), X-ray diffraction (XRD) and Auger electron spectroscopy (AES) depth profiling are used to check the sheet resistance, the phase formation and atomic distribution during the reaction. It is found that comparing with Ni reaction with a-SiGe, the phase change of Ni reaction with a-SiGeC is...
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