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7nm CMOS FinFET technology featuring EUV lithography, 4th gen. dual Fin and 2nd gen. multi-eWF gate stack is presented, providing 20% faster speed or consuming 35% less total power over 10nm technology [1]. EUV lithography, fully applied to MOL contacts and minimum-pitched metal/via interconnects, can reduce >25% mask steps with higher fidelity and smaller CD variation. AVT of 6T HD SRAM cell are...
CVD-Ru based reflow Cu scheme demonstrates robust gap fill performance at 10nm and 7nm node equivalent patterns. Potential EM and TDDB reliability concerns associated with Ru CMP are identified and successfully addressed by the application of new processes and materials. This suggests our proposed scheme can be one of promising candidates for 10nm node logic device and beyond.
Wireless power transfer (WPT) systems have been increasingly employed in modern electric vehicles and electronic devices [1]. Leakage magnetic fields from the WPT systems are an important design issue for mitigating electromagnetic field (EMF) hazard to human body [2]. In many cases of electric vehicles and electronic devices, inductive coils of the WPT systems are typically placed near metallic plates...
It is possible to overcome Cu void issues beyond 10nm node device by adapting CVD-Ru liner instead of conventional PVD Ta liner. However, CVD Ru liner integration degrades TDDB performance without optimizing its scheme. In this paper, superior gap-fill performance without TDDB performance degradation will be described in our optimized integration scheme along with a proposal for the mechanism of TDDB...
Progressive downscaling has allowed semiconductor industries to continuing improve the performance of integrated circuits (ICs) [1]. The downscaling adversely affects the performance of interconnects. Specifically, the resistivity of metal interconnects and metal-semiconductor contacts increases due to downscaling. The metal-semiconductor contact resistance is becoming a performance limiting factor...
We demonstrate optimum coverage in the enhanced transmission of terahertz radiation through 2-dimensional metallic arrays of square holes with different periodicity changing along the direction perpendicular to the incident polarization.
We demonstrate for the first time molybdenum based oxygen-bearing electrodes for improved performance in MANOS (Metal-Alumina-Nitride-Oxide) charge-trap NVM, and also MIM-DRAM type devices. The meta-stable high work- function (Wfn) molybdenum-oxynitride (MoON) electrodes result in improved retention and erase saturation for the charge trap NVM devices and improved leakage for the MIM devices. Although...
We apply a systematic approach to identify a high-k/metal gate stack degradation mechanism. Our results demonstrate that the SiO2 interfacial layer controls the overall degradation and breakdown of the high-k gate stacks stressed in inversion. Defects contributing to the gate stack degradation are associated with the high-k/metal-induced oxygen vacancies in the interfacial layer.
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