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In this paper, the investigation of four types of Schottky-gate structures prepared by low-pressure metal-organic vapour phase epitaxy on sapphire and 4H-SiC substrates, by the deep level transient Fourier spectroscopy is presented. Fifteen deep energy levels have been identified (activation energies: 0.12, 0.26, 0.28, 0.48, 0.50, 0.69, 0.72, 0.75, 0.76, 1.02, 1.23, 1.28, 1.35, 1.57, 1.58 eV). The...
In this paper we report our results of DLTS investigations of deep-level defects in Schottky-gate AlGaN/GaN LP-MOVPE structures grown on sapphire substrate. The exact location of heterostructure's interface below the surface (20 nm) was determined from the concentration profile to depletion region width dependence. The free charge carrier density was calculated (n2D = 4.75÷5.09 × 1016 m-2). Four deep...
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