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In this paper, fabrication of the dual channel CMOS devices based on the Ge-condensation technique is demonstrated as well as their mobility and current drive enhancements. Ge-rich strained SGOI pMOSFETs were integrated with strained Si/SGOI nMOSFETs by a CMOS process combined with the Ge condensation process, in which the strain in the SGOI layers were properly controlled. As a result, significant...
In this paper, the origin of p-n junction leakage current in s-Si/SGOI diodes is investigated. It is found that generation current by bulk trap is dominant in the s-Si/SGOI p-n junction leakage current compared to diffusion current and generation current by oxide interface state and that the calculated leakage current is low enough even in Ge-on-insulator (GOI) channels at hp45 nm technology node
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