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The safe-operating-area (SOA) of automotive DMOS transistors, which are operated repeatedly under high power pulses (power cycling), is lower than the classical single-pulse SOA and it is dependent on the geometry of the transistor. In this paper, we present a test system for reliability characterization of power devices, of various geometries, which operate under power cycling conditions.
In automotive applications, the lifetime of the power transistors is limited by the number of power pulses, induced by, e.g., short-circuit or inductive clamping events. This letter presents a solution for reliability improvement of double-diffused metal-oxide–semiconductor transistors which operate under thermomechanical stresses generated during power cycling.
Heating of circuits in electronics is an important design and operational aspect. Furthermore, there is an increasing need to check and evaluate temperature measurements acquired with the use of thermographic equipment. In other works, surface temperature distributions were captured and presented in an attempt to visualize the way heat is dissipated in the case of an integrated inductor. The aim of...
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