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The tri-gate (TG)- and double-gate (DG)-type poly-Si fin-channel split-gate flash memories with a thin n+-poly-Si floating-gate (FG) have successfully been fabricated, and their electrical characteristics including the variations of threshold voltage (Vt) and S-slope have been comparatively investigated. It was experimentally found that better short-channel effect (SCE) immunity, smaller Vt variations,...
The functional tri-gate flash memories with splitgate have been demonstrated for the first time, and its Vt variabilities before and after one P/E cycle have be systimetically compared with stack-gate ones. It was confirmed that split-gate shows smaller Vt distribution after erase and excellent over-erase immunity compared to those of stack-gate. Moreover, it was found that BVDS is higher than 3.2...
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