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After decades of improving semiconductor-device reliability, dielectric failure rates resulting from surface-charge accumulation, dielectric breakdown, and charge injection have been reduced to an almost imperceptible range. However, the influence of dielectric properties and behavior on device performance in microelectromechanical systems (MEMS) is still poorly understood and a substantial contributor...
We present fully silicided gate (FUSI) work function modulation and mechanisms using different NiSi alloys as well as different phases (Ni31Si12 and Nirich-Pt-Si). It is shown that the interface layer between gate silicide and dielectric is the key to modulate the work function due to Fermi level pining on HfSiO and HfO2. Ge, Yb, Pt, and Al were fully explored to identify good candidates for N and...
We present a systematic examination of work function modulation and scavenging effect on fully silicided gates using different NiSi alloys (Ti, Hf, Zr, Pd, Pt, and Al) as well as different phases (Ni31Si12 and Nirich-Pt-Si). It is shown that the interface layer between gate FUSI and dielectric is the key to modulate the work function. FUSI alloys were able to prevent Fermi level pining on HfSiO and...
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