The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Crack-free AlGaN with an Al content of 0.51 was successfully fabricated on selective-area-growth (SAG) GaN. To avoid the coalescence of the lateral overgrown GaN, the growth process of SAG-GaN was accurately controlled by in situ monitoring. Transmission electron microscopy (TEM) measurement demonstrated that the threading dislocations (TDs) disappeared from the SAG-GaN layer and appeared in the interface...