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In this paper, we study electrical characteristics of gate-all-around (GAA) silicon-germanium (SiGe) nanowire field effect transistors (NWFETS) with different aspect ratio (AR) of channel. Device characteristics: the subthreshold swing (SS), the drain induced barrier lowering (DIBL), and the ION/IOFF ratio are simulated by using three-dimensional quantum mechanically corrected device simulation. Electrical...
In this paper, we report the first result of a strained In0.52Ga0.48 As channel high-electron mobility transistor (HEMT) featuring highly doped In0.4Ga0.6 As source/drain (S/D) regions. A lattice mismatch of 0.9% between In0.52Ga0.48 As and In0.52Ga0.48 As S/D has resulted in a lateral strain in the In0.52Ga0.48 As channel region, where the series resistance is reduced with highly doped S/D regions...
Stacked multichannel transistor architectures were proposed recently which possess very attractive electrical characteristics on low leakage current and high driving current per layout area. However, due to complex manufacturing process, the process variation effect is inevitable and whose impact is unknown. Therefore, this study investigates the impact of process variation on 15-nm-gate stacked multichannel...
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