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We report on an order-of-magnitude enhancement of sensitivity of CMOS-transistor-based THz detectors. At 2.54 THz, 3.13 THz and 4.25 THz, responsivity values of 336 V/W, 308 V/W, and 230 V/W and optimum noise-equivalent-power values of 63 pW/√Hz, 85 pW/√Hz, and 110 pW/√Hz are obtained.
We present an all-electronic raster-scan imaging system for 220 GHz which is fully based on planar CMOS integrated circuit components. The emitter has been implemented in 90-nm CMOS process and delivers up to 50 µW at 220 GHz. The detector, based on a patch-antenna-coupled field-effect transistor pair has been implemented in a 150-nm CMOS process and exhibits a maximum responsivity of 180 V/W at 213...
In order to understand the biosensing mechanism of field-effect based biosensors and optimize their performance, the effect of each of its molecular building block must be understood. In this work the gating effect of self-assembled linker molecules on field-effect transistor was studied in detail. We have combined Kelvin probe force microscopy, current–voltage measurements, capacitance–voltage measurements,...
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