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System-on-Chip (SOC) and System-on-Package (SOP) technologies each have advantages depending on application needs. As system architects and designers leverage ever-increasing CMOS technology densities, a range of two- and three-dimensional silicon integration technologies are emerging which will likely support next-generation high-volume electronic applications and may serve high-performance computing...
A silicon-based system-on-package (SOP) is described. Novel capabilities of SOP are expected to enable lower cost, more efficient and higher performance electronic systems. Newly developed technology elements include: electrical silicon through-vias, fine-pitch, high bandwidth wiring, fine pitch solder interconnection, fine pitch known-good-die, and advanced microchannel cooling. Applications may...
In the past, traditional CMOS scaling has been one of the principal levers to achieve increased system-level performance. Today, scaling is becoming increasingly difficult and less effective, and a range of new two- and three-dimensional silicon integration technologies are needed to support next-generation systems. A silicon-carrier system-on-package (SOP) is an advanced packaging solution, enabling...
To support the next generation highly integrated microsystem with 3D silicon integration using fine pitch interconnection and Si carrier, we develop a fabrication and assembly process at IBM Research to produce solder micro-joints (fine pitch flip-chip interconnections) for our system-on-package (SOP) technology. We fabricate solder bumps with 25 mum (or less) in diameter on 50 mum pitch size, as...
This paper describes yield, contact resistance, and preliminary reliability test results on micro-bump C4 interconnects in modules containing Si-chips and Si-carriers. Modules containing eutectic PbSn or SnCu bump solders were fabricated with high yield, with similar interconnect contact resistances for both solders. The contact resistance and reliability test results to date suggest that reliable,...
The design, fabrication, assembly and characterization of a novel silicon carrier package used for enabling a Tb/s parallel optical transceiver is reported. Electrical through-vias, high speed wiring and a through cavity for housing optoelectronic (OE) devices are critical features of the silicon carrier that allow high density integration of optical and electrical components on a single substrate,...
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