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The effects of bismuth on the performances of InP-based detectors and multiple triangular quantum wells in 2–3 µm band have been investigated. The cut-off wavelength of the InGaAsBi detector is tailored to 2.1 µm by the bismuth incorporation in the absorption layer, but the detector still shows an encouraging dark current due to decreased lattice mismatch to InP substrate. The material quality of...
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