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The evolution of the electrically active acceptor profiles and of the surface morphology in 4H-SiC implanted with multiple energy (from 550 to 40 keV) Al ions was investigated by the combined use of scanning capacitance microscopy (SCM) and atomic force microscopy (AFM), depending on the post-implantation annealing conditions at temperatures from 1400 degC to 1650 degC in Ar or Ar+SiH4 ambient. Medium...
The effects of thermal annealing either on the electrical activation of implanted species or device isolation were investigated. Silicon implantation was used for n-type doping, Magnesium for p-type doping and/or devices edge termination, while Nitrogen for devices isolation. The ions species were implanted on n-type GaN films (~ 2times1016 cm-3) at energies between 30 and 180 keV and fluences in...
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