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In this paper a new characterization technique, the OXYMAP technology, allowing measurement of the interstitial oxygen concentration and the oxygen related defects in Czochralski grown silicon, is presented. We applied this technique to 8 inch industrial-like p-type ingots. Relevant information regarding the material quality (compositional and electrical properties) were extracted, and we demonstrated...
The effect of doping compensation on the electrical and photovoltaic properties of Silicon (Si) wafers and solar cells are mapped on peculiar wafers taken from a highly doped and compensated ingot. Extensive mapping characterizations were performed at the material (carrier density and mobility) and at the solar cell levels (I–V parameters under illumination, breakdown voltages). One of the striking...
The presented work is part of the French PHOTOSIL project which deals with the purification of metallurgical grade (MG) silicon to obtain Solar Grade (SoG) silicon by a combination of innovative refinement/up-grading techniques such as segregation and plasma purification. The main objectives of this project are production costs <;15€/kg, a photovoltaic performance of >15% solar cell efficiencies,...
The crystallization of purified metallurgical Silicon often leads to multi crystalline ingots which present regions of strong compensation and an inversion of the polarity type. These effects result from the presence of different dopant atoms, donors and acceptors, in this type of Silicon and their different segregation behavior during the crystallization process. The most commonly found dopant atoms...
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