The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We demonstrate a novel strained Si n-FET where the strain-transfer efficiency of lattice-mismatched source/drain (S/D) stressors is increased significantly by the interaction between an embedded Si0.7Ge0.3 stress transfer layer (STL) and the SiC source/drain (S/D) stressors. The compliance of the SiGe-OI STL caused significant uniaxial tensile strain to be induced in the Si channel. Devices with gate...
A novel strained-SiGe n-channel field-effect transistor (nFET) featuring silicon-carbon (Si0.99C0.01) source/drain (S/D) stressors and tensile stress nitride (SiN) liner is demonstrated for the first time. The silicon-carbon Si1-yC y, material is pseudomorphically grown by selective epitaxy and the carbon mole fraction y incorporated is 1%. Si0.99C 0.01 S/D was employed to induce uniaxial tensile...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.