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Group-III nitride nanowire structures, including GaN, InN, AlN and their alloys, have been intensively studied in the past decade. Unique to this material system is that its energy bandgap can be tuned from the deep ultraviolet (~6.2eV for AlN) to the near infrared (~0.65eV for InN). In this article, we provide an overview on the recent progress made in III-nitride nanowire optoelectronic devices,...