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This paper analyzes and improves the performance of a hybrid memory cell consisting of a memristor and ambipolar transistors. This work extends a previous design by efficiently biasing the memristor (as controlled by the ambipolar transistors), such that no refresh operation is now required. By utilizing macroscopic models, the features of the cell are characterized for the memory operations and no...
This paper presents a Ternary Content Addressable Memory (TCAM) cell that employs memristors as storage element. The TCAM cell requires two memristors in series to perform the traditional memory operations (read and write) as well as the search and matching operations for TCAM; this memory cell is analyzed with respect to different features (such as memristance range and voltage threshold) of the...
CMOS is expected to soon meet the end of the Semiconductor Industry Technology Roadmap. This paper investigates the memristor as a post-CMOS component for memory design. The proposed cell requires one transistor and one memristor (i.e. 1T1M); this cell employs novel read and write mechanisms for improved performance. Initially, it is shown that differently from previous designs, the proposed scheme...
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