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The reliability of the non-volatile NAND flash memories, measured in terms of Raw Bit Error Rate (RBER), is reaching critical levels for traditional error detection and correction. Therefore, to ensure data trustworthiness in nowadays NAND flash-based Solid State Drives, it becomes essential exploiting powerful correction algorithms such as the Low Density Parity Check (LDPC). However, the burdens...
In this work a SET/RESET investigation in cycling on ReRAM arrays has been performed, in order to find the most reliable SET/RESET operation conditions. The analysis will compare DC and pulsed SET/RESET operations featuring different durations and voltages on previously DC formed 1T-lR4kbits memory arrays. A thorough analysis of the ReRAM reliability joining the cell-to-cell variability analysis to...
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