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In this paper, we present extensive random telegraph signal (RTS) noise characterization in advanced SiGe:C heterojunction bipolar transistors. In frequency domain, in addition to 1/f noise, generation-recombination (G-R) mechanisms are observed at low base bias in the base noise. Their existence is confirmed by RTS noise measurements in time domain. The RTS amplitude evolves rather slowly with bias,...
In this paper, we report the low-frequency noise characterization of CVD -grown Graphene FETs (GFET). Low-frequency measurements indicate a dominant contribution of 1/f noise in the drain current noise source. A quadratic dependence of the drain current-noise on drain current is observed. An overall comparison between different geometries of the two generations of the CVD GFETs is shown in terms of...
Ultra thin HfO 2 high-k gate dielectric has been deposited directly on strained Si 0.81 Ge 0.19 by atomic layer deposition process. Important electrical properties such as, interface trap density, charge trapping behavior, and low-frequency noise characteristics have been studied in detail. Grazing incidence X-ray diffraction analysis shows that the conversion from amorphous...
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