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Device characteristics of single-gate vertical channel (SGVC) 3D NAND architecture are discussed in detail. The most important feature of SGVC is that the memory cell is a flat-channel device in 3D, different from the more often used gate-all-around (GAA) macaroni cell. Through various device optimizations, we have successfully produced excellent cell initial performances and more than 10V peak P/E...
We demonstrate a novel vertical channel 3D NAND Flash architecture — SGVC. SGVC device is a single-gate, flat-channel TFT charge-trapping device with ultra-thin body. Our novel array decoding method enables a tight-pitch (25nm HP) metal BL design to fulfill the large page size (16KB for one plane) for high-performance NAND product. The SGVC flat cell possesses excellent P/E window of ∼10V, small X/Y/Z...
In this paper, we propose a low computing complexity architecture design of 2D-to-3D image converter. The presented approach establishes database of slope pattern to analyze the 2D image. According to slope and intersection, the scheme predicts vanishing points of 2D image. Then, depth map is reconstructed using vanishing points information. This approach focuses on fundamental structure analysis...
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