The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We present a silicon nanowire-based field-effect transistor biosensor with Schottky barriers for highly specific and sensitive human α-thrombin detection. The active sensor area is decorated with thrombin-binding aptamers as receptor molecules. Each sensor chip is integrated into a microfluidic device for flow-through measurements. Instantaneous detection is provided by real-time monitoring of FET...
Reconfigurable silicon nanowire field-effect transistors (RFETs) combine the functionality of classical unipolar p-type and n-type FETs in one universal device. In this paper, we show devices exhibiting full symmetry between p- and n-functionality, while having identical geometry. Scaling trends and feasibility for digital circuit integration are evaluated based on TCAD simulations. The method of...
Reconfigurable silicon nanowire field effect transistors (RFETs) provide both operation modes of p-type and n-type field effect transistors in a single multigate device. This unique feature provides additional degrees of freedom in terms of circuit design and device layout. Here a device-circuit co-design study of a novel 1-bit full adder with only 20 transistors is presented. The delay of the adder...
For the development of ultra-sensitive electrical bio/chemical sensors based on nanowire field effect transistors (FETs), the influence of the ions in the solution on the electron transport has to be understood. For this purpose we establish a simulation platform for nanowire FETs in the liquid environment by implementing the modified Poisson-Boltzmann model into Landauer transport theory. We investigate...
Nanoscale electronic devices have the potential to achieve exquisite sensitivity as sensors for the direct detection of molecular interactions, thereby decreasing diagnostics costs and enabling previously impossible sensing in disparate field environments. Semiconducting nanowire-field effect transistors (NW-FETs) hold particular promise, though contemporary NW approaches are inadequate for realistic...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.