The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this paper, a new theory of current filament formation in MOSFET-Mode IGBTs is presented, for the first time, based on large scale 3D & 2D TCAD simulations. It was found that current filaments appear because the total collector current increases while current filaments are growing. The total collector current of the state of filament is larger than that of the state of uniform current flow...
It was experimentally found that the short-circuit withstanding capability is degraded for MOSFET-mode IGBTs, whose anode efficiency is low and the ratio of electron current over hole current is greater than the mobility ratio. New destruction mechanism of MOSFET-Mode IGBT is proposed in this paper by using large scale TCAD simulations. It is found, for the first time, that current filaments are observed...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.