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We present, for the first time, a holistic data-path driven transistor-interconnect co-optimization method, which systematically isolates the logic-gate and interconnect-wire dominated data-paths in block-level delay-bins (i.e., sub-binning of delay based bins) to significantly improve accuracy of static and dynamic power estimation. It captures the critical interdependence of transistor architecture...
We systematically investigated the impact of R and C scaling to 7nm node (N7) by accounting for FEOL and BEOL holistically. Speed-power performance of plainly scaled N7 turns out to be degraded compared to previous node. BEOL wire resistance (Rwire) multiplied by logic gate input pin cap (Cpin), Rwire×Cpin, is identified as a major limiter of performance and power at N7. Reducing Cpin is crucial to...
We present, for the first time, a holistic data-path driven transistor-interconnect co-optimization method, which systematically isolates the logic-gate and interconnect-wire dominated data-paths in block-level delay-bins (i.e., sub-binning of delay based bins) to significantly improve accuracy of static and dynamic power estimation. It captures the critical interdependence of transistor architecture...
We systematically investigated the impact of R and C scaling to 7nm node (N7) by accounting for FEOL and BEOL holistically. Speed-power performance of plainly scaled N7 turns out to be degraded compared to previous node. BEOL wire resistance (Rwire) multiplied by logic gate input pin cap (Cpin), Rwire×Cpin, is identified as a major limiter of performance and power at N7. Reducing Cpin is crucial to...
With the help of MgO mask layer, LiNbO 3 (LN) ferroelectric films were etched effectively using wet etching method and LN/AlGaN/GaN ferroelectric field-effect transistors (FFETs) were fabricated. The electrical properties of the FFETs were studied. Due to the ferroelectric polarization nature of LN films, normally-off characteristics with a turn-on voltage of about +1.0V were exhibited in...
With continuous scaling in transistor size, there is demand to develop advanced FIB techniques for TEM failure analysis. Two techniques are reported here: 1) consecutive planar-cross section sample preparation for dual-direction TEM analysis and, 2) enhanced coating method for photo resists profile evaluation. Both the techniques have been successfully applied on deep sub-micron device issues which...
Nano Beam Diffraction has been used to analyze the local strain distribution in MOS transistors. The influence of wafer process on the channel strain has been systematically analyzed in this paper. The source/drain implantation can cause a little strain loss but the silicidation step is the key process in which dramatic strain loss has been found.
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