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Eu-doped silicon-rich silicon oxide (SRSO) films on P (100) Si substrate were deposited by electron beam evaporation (EBE). The effect of annealing procedure on the photoluminescence (PL) has been investigated in detail. Experimental results show that after 1100degC annealing at non-reductive atmosphere, the films are revealed to yield an intense broad band yellow light emission. PL spectra of the...
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