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An Ag(In, Ga)Se2 (AIGS) absorber layer of AIGS solar cell was deposited by a three-stage method and other layers were also fabricated to complete the integrated solar cell structure. The interface between the AIGS film and CdS buffer layer was investigated using bright field scanning transmission electron microscopy (BF-STEM) and high-angle annular dark field (HAADF) scanning transmission electron...
Hydrogenated amorphous silicon oxide (a-SiO:H) films were prepared by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) using mixture of SiH4, H2 and CO2 source gas. The optical bandgap (Eopt) in the range between 1.90 and 2.02 eV was obtained by the variation of CO2 flow rate and H2 dilution. With increasing of H2 dilution, it was found that Eopt of the films increased and...
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