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We have successfully prepared silicon quantum dots / amorphous silicon carbide multilayers by thermal annealing of stoichiometric hydrogenated amorphous silicon carbide (a-SiC:H) / silicon rich hydrogenated amorphous silicon carbide (a-Si1+xC) multilayers for thin-film solar cell applications. By hydrogen plasma treatment (HPT), hydrogen was almost uniformly incorporated into Si-QDSL and the defect...
Hydrogenated amorphous silicon oxide (a-SiO:H) films were prepared by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) using mixture of SiH4, H2 and CO2 source gas. The optical bandgap (Eopt) in the range between 1.90 and 2.02 eV was obtained by the variation of CO2 flow rate and H2 dilution. With increasing of H2 dilution, it was found that Eopt of the films increased and...
Theoretical and experimental studies were performed to explore the effect of band gap profiling on the performance of wide-gap a-SiC:H cells. The theoretical study was conducted using Advanced Semiconductor Analysis (ASA) to analyze the characteristics of a-SiC:H cell with various types of band gap profiling. We calculated three types of band gap profiling, the U-shape with one-step staircase front...
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