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The knowledge of the microscopic feature of matter is of paramount importance in materials science. In particular, the information about the atomic configuration is essential for the understanding of the characteristic properties of disordered matter. Therefore, a huge amount of efforts has been devoted to the development of experimental techniques coupled with X-ray or neutron diffraction techniques...
We have fabricated the stacked interconnects of multi-layer graphene (MLG) and nickel (Ni) at the line width from 30 to 1000 nm in 300 mm wafer. MLG, which was grown by CVD process, was selectively deposited on Ni damascene interconnects by the catalytic reaction of Ni. MLG grown from C2H2 was composed of approximately 20 layers of graphene sheets and covered the overall surface of Ni interconnects...
We have developed a CMP process providing a short polishing time and sufficient uniformity that is applicable to 300 mm scale carbon nanotube (CNT) via integration. To achieve our target, we have developed a new CMP process to make selectively grown CNT in a via hole. Spin on carbon (SOC)film was coated to protect nickel (Ni) catalyst and titanium nitride (TiN) film inside the via hole during SOC-CMP...
We fabricated a carbon nanotube (CNT) via structure on a 300-mm wafer. We investigated the CNT chemical-mechanical polishing (CNT-CMP) behavior in an actual via pattern structure and clarified the technical issues of the CNT-CMP process. We developed a fabrication process of CNT via structures using selective CNT growth, which has a high potential for applying CNTs to high aspect ratio via structures.
The present work investigated the possibility of the formation of graphene interconnects and studied the behavior of graphene growth in wiring structure. Graphene nucleated on the facet of catalytic metal, and multi layer graphene grew along the terrace surface of catalytic metal. Selective graphene growth served the stacked interconnects structure of graphene / Ni catalytic metal.
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