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In this paper, a normally off Al2O3/AlN/GaN MISFET on Si substrate for achieving high threshold voltage stability and uniformity is obtained based on selective area growth. A thin AlN space layer (SL, ~1 nm) is adopted to GaN-based template, and the AlGaN/GaN het-erostructureis selectivelygrownon the template to naturally form a recessed structure. By insertion of the AlN SL, the Al2O3/AlN/GaN interface...
The influence of the total thickness (periods of AlN/GaN SLs) of AlN/GaN superlattices (SLs) buffer on the static electrical properties of AlGaN/GaN HFETs is study for the purpose of improving device's breakdown voltage (BV) and reducing its on-resistance (RON). It is found that for top-GaN layer with a constant thickness of lμm, a proper thickness of AlN/GaN SLs buffer (such as 2.5 μm with 100 period...
In this paper, the leakage path and breakdown behavior of GaN on silicon substrate were studied systematically. Three terminal breakdown voltage characteristics of the samples with various ohmic contacts spacing were evaluated. With increasing the spacing between the contacts, the breakdown voltage increased linearly first and then saturated. In order to clarify the breakdown behavior, leakage path...
AlGaN back barrier with different thickness is used in AlGaN/GaN high electron mobility transistors (HEMTs) to evaluate the device performances. It shows that a proper AlGaN back barrier thickness (tbb ∼100 nm) is beneficial for obtaining low leakage current and high Ion/Ioff ratio of approximately 108. While further increasing the AlGaN thickness can deteriorate the device performances because of...
In this paper, we investigated the effect of GaN interlayer thickness and AlGaN back barrier layer on the material and electrical properties of AlGaN/GaN HFETs. When the thickness of GaN interlayer is approximately 3 and 5 nm, it will slightly increase surface roughness and degrades 2DEG carrier density. The 2DEG channel is also up shifted to nearly beneath the GaN interlayer. By contrast, 10 nm GaN...
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